stm32L476-擦除闪光灯

Question

L4系列使用页面(如果进行完全擦除，则为存储体(擦除闪存。但我在做页面擦除后，在写作方面遇到了一些问题，我不知道为什么。

为了概括目标，我存储了从0x08080000开始的6个值(第256页(那么我将存储更多的值，从0x08080800((第257页(到0x08085800(第267页(

我使用一个函数来擦除/写入第256页的值：

void write_bias_flash(int16_t biases[]) {
uint16_t *flash_biases = (uint16_t*) (ADDR_FLASH_PAGE_256);
static FLASH_EraseInitTypeDef EraseInitStruct;
Address = ADDR_FLASH_PAGE_256;
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Page = 0;
EraseInitStruct.Banks = FLASH_BANK_2;
EraseInitStruct.NbPages = 1;
HAL_FLASH_Unlock();
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
serprintf("Error erasing biases at address: 0x%x", Address);
}
for (int8_t bias = 0; bias < 6; bias++) {
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD,
Address + bias * sizeof(uint64_t), (uint64_t) biases[bias])
!= HAL_OK)
serprintf("Error writing biases to flash.");
}
HAL_FLASH_Lock();
serprintf("Biases stored in flash.");
}

这工作很棒。没有问题。

我有两个功能用于擦除/写入从0x08080800开始的数据((第257页(：

void Erase_TM_Flash() {
uint8_t *flash = (uint8_t*) (FLASH_USER_START_ADDR);
uint8_t *b = (uint16_t*) (ADDR_FLASH_PAGE_256);
static FLASH_EraseInitTypeDef EraseInitStruct;
Address = FLASH_USER_START_ADDR;
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Page = 1;
EraseInitStruct.NbPages = 255;
EraseInitStruct.Banks = FLASH_BANK_2;
HAL_FLASH_Unlock();
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
serprintf("Error erasing biases at address: 0x%x", Address);
}
HAL_FLASH_Lock();
for (uint16_t i = 0; i< (FLASH_ROW_SIZE * sizeof(uint64_t))*255; i++)
{
if ((uint16_t) *(flash+i) != 255) {
serprintf("0x%x is not erased (%i)", flash+i, (uint16_t) *(flash+i));
}
}
}
void Save_to_Flash(uint32_t *data) {
uint32_t src_addr = (uint32_t) data;
Erase_TM_Flash();
serprintf("Saving to flash...");
HAL_StatusTypeDef HAL_STATUS;
HAL_FLASH_Unlock();
Address = FLASH_USER_START_ADDR;
while (Address < (FLASH_USER_END_ADDR - (FLASH_ROW_SIZE * sizeof(uint64_t)))) {
HAL_STATUS = HAL_FLASH_Program(FLASH_TYPEPROGRAM_FAST, Address, (uint64_t) src_addr);
if (HAL_STATUS == HAL_OK) {
Address = Addres+ (FLASH_ROW_SIZE * sizeof(uint64_t));
src_addr = src_addr + (FLASH_ROW_SIZE * sizeof(uint64_t));
} else {
serprintf("Error writing flash at address 0x%x. (%i)", Address, HAL_STATUS);
Address = Address + (FLASH_ROW_SIZE * sizeof(uint64_t));
src_addr = src_addr + (FLASH_ROW_SIZE * sizeof(uint64_t));
}
}
HAL_FLASH_Lock();
serprintf("Done");
}

擦除效果很好。我在调试器中验证这些值(在代码中检查未擦除的页面(。但当节省发生时：

Error writing flash at address 0x8080800. (1)
Error writing flash at address 0x8080900. (1)
Error writing flash at address 0x8080a00. (1)
Error writing flash at address 0x8080b00. (1)

在剩下的所有页面中依此类推。

但是，如果我擦除整个闪存：

void Erase_Flash() {
serprintf("Erasing flash...");
HAL_FLASH_Unlock();
/* Clear OPTVERR bit set on virgin samples */
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_MASSERASE;
EraseInitStruct.Banks = FLASH_BANK_2;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
serprintf("Error erasing flash.");
}
HAL_FLASH_Lock();
serprintf("Done.");
}

然后写作就像一种魅力。HAL_STATUS=1，根据我发现的代码，它是HAL_ERROR=0x01U，这并没有完全的帮助。

我不确定有什么不同，但我希望通过另一种方式来观察我的删除可能会发现这个问题。

谢谢！

Answer 1

此问题似乎与闪存快速编程有关，并非所有STM32型号都有此功能。

根据参考手册(RM0351(，在使用快速编程之前，必须对闪存进行大规模擦除。否则，将出现编程序列错误，并设置FLASH_SR寄存器中的PGSERR位。请参阅快速编程/编程错误和3.7.5位7 PGSERR下的3.3.7闪存主存储器编程序列。

RM0351修订版9，3.3.7闪存主存储器编程序列，见第106页：

Fast programming
(...)
1. Perform a mass erase of the bank to program. If not, PGSERR is set.
2. (...)

RM0351修订版9，3.3.7闪存主存储器编程序列，见第107页：

Programming errors
(...)
PGSERR: Programming Sequence Error
PGSERR is set if one of the following conditions occurs:
– (...)
– In the fast programming sequence: the Mass erase is not performed before setting 
FSTPG bit.
– (...)

因此，观察到的行为与预期一致因此，您可以更换Erase_TM_Flash()功能，并使用Erase_Flash()首先大规模擦除整个闪存组。或者，完全避免使用闪存快速编程，而是使用FLASH_Program_DoubleWord()或FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, ...)。

相关源文件：stm32l4xx_hal_flash.h、stm32l4xxx_hal_flach.c

相关帖子：STM32-写入和读取闪存